Optical photoresponse of CuS-n-Si radial heterojunction with Si nanocone arrays fabricated by chemical etchingKATIYAR, Ajit K; ARUN KUMAR SINHA; MANNA, Santanu et al.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 48, pp 20887-20893, issn 1463-9076, 7 p.Article

Study of GaSb(001) substrate chemical etching for molecular-beam epitaxyDA SILVA, F. W. O; SILGA, M; RAISIN, C et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 1, pp 75-78, issn 0734-211X, 4 p.Article

Aridos reactivos. Acción de hidróxidos alcalinos sobre minerales opalinos = Déchets réactivés. Action des hydroxydes alcalins sur les minéraux d'opaleBUSTILLO, M. A; SORIANO, J; BARBA, C et al.Sociedad española de mineralogia. Reunión Cientifica. 4. 1983, Vol 7, pp 199-209, issn 0210-6558Conference Paper

International Workshop on Physical Chemistry of Wet Etching of Semiconductors (PCWES 2006)SEIDEL, Helmut.Journal of micromechanics and microengineering (Print). 2007, Vol 17, Num 4, issn 0960-1317, S1―S60Conference Paper

Peroxide/sulfuric acid etching for PC boardsKEATING, K. F; GOUCH, M. A.Plating and surface finishing. 1986, Vol 73, Num 8, pp 106-109, issn 0360-3164Article

Imaging uranium distributions in fossil bones by fission track etching = Image de la répartition d'uranium dans les os fossiles par attaque chimique des traces de fissionSCHMIDT, W; WILD, E; HILLE, P et al.Journal of radioanalytical chemistry. 1983, Vol 79, Num 2, pp 303-307, issn 0134-0719Article

New method for petrographic analysis of anthracite = Nouvelle méthode d'analyse pétrographique de l'anthraciteKIZIL'SHTEYN, L. YA; SHPITSGLUZ, A. L.Doklady. Earth science sections. 1982, Vol 263, pp 106-109, issn 0012-494XArticle

Etching: a two-dimensional mathematical approachKUIKEN, H. K.Proceedings of the royal society of London, series A : mathematical and physical sciences. 1984, Vol 392, Num 1802, pp 199-225, issn 0080-4630Article

Improved anisotropic deep etching in KOH-solutions to fabricate highly specular surfacesMIHALCEA, C; HÖLZ, A; KUWAHARA, M et al.Microelectronic engineering. 2001, Vol 57-58, pp 781-786, issn 0167-9317Conference Paper

Missing track segment on the growth curve of etch-pit radiusYAMAUCHI, T; MATSUMOTO, H; ODA, K et al.Radiation measurements. 1995, Vol 24, Num 1, pp 101-104, issn 1350-4487Article

Formy prirodnogo rastvoreniya kolumbijskikh kristallov berilla (izumrudov)BENAVIDES, K.Zapiski Vsesoûznogo mineralogičeskogo obŝestva. 1985, Num 5, pp 591-593, issn 0044-1805Article

Preferential etching of InP for submicron fabrication with HCl/H₃PO₄ solutionUEKUSA, S; OIGAWA, K; TACANO, M et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 3, pp 671-673, issn 0013-4651Article

Discussion on terminology, anisotropy, and interprocedural cross-checks of fission track ages zircon = Discussion sur la terminologie, l'anisotropie et les vérifications-croisées de procédure de la datation trace de fission du zirconSUZUKI, M.Chishitsugaku Zasshi. 1984, Vol 90, Num 8, pp 551-563, issn 0016-7630Article

Chemical etching characteristics of (001)GaAsADACHI, S; OE, K.Journal of the Electrochemical Society. 1983, Vol 130, Num 12, pp 2427-2435, issn 0013-4651Article

Yamki travleniya na skolakh kvartsaBALAKIREV, V. G; TSINOBER, L. I; POVERINA, S. N et al.Izvestiâ Akademii nauk SSSR. Seriâ geologičeskaâ. 1983, Num 10, pp 94-108, issn 0321-1703Article

Characterization of waferstepper and process related Front- to Backwafer overlay errors in bulk micro machining using electrical overlay test structuresVAN ZEIJL, H. W; BIJNEN, F. G. C; SLABBEKOORN, J et al.SPIE proceedings series. 2004, pp 398-406, isbn 0-8194-5378-1, 9 p.Conference Paper

Magnetically enhanced triode etching of large area silicon membranes in a molecular bromine plasmaWOLFE, J. C; SEN, S; PENDHARKAR, S. V et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2716-2719, issn 1071-1023Conference Paper

Revealing of lattice defects on {001} GaAs surfaces by KI:I:H₂SO₄-etchantGOTTSCHALCH, V; HERRNBEGER, H.Journal of materials science letters. 1990, Vol 9, Num 1, pp 7-10, issn 0261-8028, 4 p.Article

L'efficacité anisotrope de l'attaque dans la datation par trace de fissionGANZAWA, Y.1985, Vol 39, Num 3, pp 195-209, issn 0366-6611Article

Ceramic and refractory linings for acid condensation. IIPIERRE, R. R; SEMLER, C. E.Chemical engineering (New York, NY). 1984, Vol 91, Num 2, pp 101-104, issn 0009-2460Article

Fabrication of damage free micropatterns in siliconGUPTA, R. P; DESHMUKH, P. R; KHOKLE, W. S et al.Microelectronics and reliability. 1984, Vol 24, Num 4, pp 623-624, issn 0026-2714Article

Mikrofossilien aus Geschieben. III. Gewinnung = Microfossiles des galets erratiques. 3ème extractionSCHALLREUTER, R.1983, Vol 16, Num 3-4, pp 113-144, issn 0340-4056Article

DEGRADATION DU REVETEMENT DU CREUSET D'UN HAUT FOURNEAU DE 2700 M³BORODULIN AI; SATSKIJ VA; MARDER BF et al.1972; STAL; S.S.S.R.; DA. 1972; NO 12; PP. 1073-1077; BIBL. 5 REF.Serial Issue

ATZEN VON METALLEN UND METALLEGIERUNGEN = ATTAQUE DE METAUX ET D'ALLIAGES DE METAUXDEGNER H.1973; METALLVERARBEITUNG; DTSCH.; DA. 1973; VOL. 27; NO 3; PP. 67Serial Issue

DISLOCATION ETCH HILLOCK FORMATION IN WHITE TIN SINGLE CRYSTALHONDA K; HIROKAWA T.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 12; PP. 1763-1774; BIBL. 21 REF.Serial Issue